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  • Rapid High-Fidelity Spin-State Readout in - Physical Review Link Manager
    Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive
  • Rapid high-fidelity spin state readout in Si SiGe quantum dots via . . .
    In this work, we implement radio-frequency reflectometry in a Si SiGe quantum dot device with overlapping gates by making minor device-level changes that eliminate these challenges We demonstrate charge state readout with a fidelity above 99 9% in an integration time of 300 ns
  • ‪John Nichol‬ - ‪Google Scholar‬
    EJ Connors, JJ Nelson, JM Nichol Physical Review Applied 13 (2), 024019, 2020 87: 2020: Nanoscale Fourier-transform magnetic resonance imaging Physical Review X 10 (3), 031006, 2020 59: 2020: Controlling the nonlinearity of silicon nanowire resonators using active feedback JM Nichol, ER Hemesath, LJ Lauhon, R Budakian
  • Physical Review Journals
    @article{PhysRevApplied 13 024019, title = {Rapid High-Fidelity Spin-State Readout in $\mathrm{Si}$ $\mathrm{Si}$-$\mathrm{Ge}$ Quantum Dots via rf Reflectometry}, author = {Connors, Elliot J and Nelson, JJ and Nichol, John M }, journal = {Phys Rev Appl }, volume = {13}, issue = {2}, pages = {024019}, numpages = {9}, year = {2020}, month
  • Rapid High-Fidelity Spin-State Readout in Si Si - ResearchGate
    In this work, we implement radio-frequency reflectometry in a Si Si−Ge quantum-dot device with overlapping gates by making minor device-level changes that eliminate these challenges We demonstrate
  • INSPIRE
    A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99 9%
  • PHYSICAL REVIEW B100, 165305 (2019) - harvest. aps. org
    We investigate the dependence of low-frequency charge noise spectra on temperature and aluminum-oxide gate dielectric thickness in Si SiGe quantum dots with overlapping gates We find that charge noise increases with aluminum-oxide thickness
  • Pursuing high-fidelity control of spin qubits in natural Si SiGe . . .
    Electron spins in silicon quantum dots are a promising platform for fault-tolerant quantum computing Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities Suppressing this noise is crucial for high-fidelity qubit operations
  • Rapid High-Fidelity Spin-State Readout in Si Si-Ge Quantum Dots via rf . . .
    In this work, we implement radio-frequency re ectometry in a Si SiGe quantum dot device with overlapping gates by making minor device-level changes that eliminate these challenges We demonstrate charge state readout with a delity above 99:9% in an integration time of 300 ns
  • Publications - Nichol Group
    E J Connors, JJ Nelson, L F Edge, J M Nichol Charge-noise spectroscopy of Si SiGe quantum dots via dynamically-decoupled exchange oscillations Nature Communications, 13 , 940 (2022) 2021





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