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  • WHAT IT IS SiGe:C the conventional silicon bipolar transistor.
    We now have the ability to re-engineer the band gap of the silicon for high performance, resulting in a heterojunction system that is compatible with the silicon technology The SiGe:C Heterojunction Bipolar Transistor (HBT) offers higher unity gain frequency or F t, lower noise figure, higher collector current and better linearity than
  • SiGe Introduction - Auburn University Samuel Ginn College of Engineering
    The heart of SiGe technology is a SiGe heterojunction bipolar transistor (HBT), which offers advantages over both conventional silicon bipolar and silicon CMOS for implementation of communications circuits
  • A Comparative Study on SiGe HBTs and Si BJTs in Nanoscale
    SiGe HBTs provide many advantages over the conventional Si homojunction bipolar transistors (Si-BJTs) The SiGe-HBTs offer vertical scaling with low base resistance for high speed performance, very high current gain and lower turn on voltage for analogue design
  • Silicon Germanium (SiGe) Technology Enhances Radio Front-End . . . - Analog
    Analog's new SiGe process, GST-3, was created as an extension of GST-2 (a bipolar process with a transition frequency of 27GHz) by doping the transistor bases with germanium The result was an important decrease in Rbb´ and a significant increase in the transistor beta
  • Si SiGe Devices and The RF Communications Revolution - RF Globalnet
    SiGe HBTs replace the Si-implanted base of Si bipolar junction transistors (BJTs) with an epitaxially grown SiGe base layer, adding process complexity and increasing costs, but permitting a tremendous boost in speed
  • SiGe : TECHNOLOGY AND PARAMETERS- FREQUENCY RESPONSE AND CURRENT GAIN
    classic bipolar Si transistor in the range of a medium current, while at high-doped collector (NC = 1,7 10 17 cm-3) that difference is very well expressed in the middle and high levels of IC The explanation of this effect lays in the controlled deformation of the base [1]
  • SiGe Heterojunction Bipolar Transistors
    In the first chapter the reader is given an overview of silicon and SiGe heterojunction bipolar technologies and is introduced to the operating principles of the bipolar transistor A more rigorous and quantitative description of the DC bipolar transistor operation is then given in the succeeding two chapters
  • SiGe-base heterojunction bipolar transistors: physics and design issues . . .
    Abstract: It has been shown that SiGe technology has the capability to extend the performance of Si bipolar transistors at both high and low current levels The ability to tailor the bandgap, independently of the doping profile design, provides considerable flexibility for optimizing cutoff frequency, intrinsic base resistance, and
  • SiGe Heterojunction Bipolar Technology and Applications - IEEE
    Selective SiGe base Transistor • SiGe grows on exposed regions of the Si wafer • Oxide is used as a mask • No need for a seed layer • Needs DCS, HCl and Germane • Sensitive to exposed pattern density • Low throughput • Additional poly is needed to contact the base • Integrates into an existing double poly process
  • Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and . . .
    silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar CMOS (BiCMOS) technologies are reviewed in terms of their current status and potential future directions SiGe HBTs and BiCMOS are promising candidates for both high-speed digital operation and high-frequency analog operation for ICs and LSIs in





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