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  • Piranha solution - Wikipedia
    Fragments of silicon wafer immersed in a piranha solution for cleaning their surfaces One can see bubbles of gaseous O2 formed by the coalescence of nascent atomic oxygen produced by the reaction between hydrogen peroxide and sulfuric acid
  • Wet-Chemical Etching and Cleaning of Silicon - University of Pennsylvania
    General Clean: A general cleaning is accomplished by using a mixture of Sulfuric Acid and Hydrogen Peroxide Mixing these chemicals is dangerous and generates extreme heat This industry standard clean removes organic and inorganic contamination from the wafer 2-10 minute clean is recommended
  • Dilute sulfuric peroxide at point-of-use - Google Patents
    DSP is an aqueous based, dilute solution of sulfuric acid and hydrogen peroxide Though chemically the same as piranha, the dilution of DSP enables a more controlled cleaning process on an
  • MINIMIZING SULFUR CONTAMINATION AND RINSE WATER VOLUME REQUIRED . . .
    Rinsing studies were performed using 6-inch n-type (100) bare silicon wafers and 100 A thermally oxidized silicon wafers The contact angle of the thermal oxide and silicon wafers was altered prior to the SPM clean by processing these wafers through either a 100: 1 HF dip, a 64:4: 1 (H20:H202:mOH) SC-1 clean, a 5:l:l (H20:H202:HCl)
  • How the SPM Clean Process is Supported in a Wet Bench Process - Modutek
    Sulfuric acid in the SPM solution reacts with organic contaminants like photoresist and residue, while hydrogen peroxide oxidizes and removes inorganic contaminants like metal ions and particles from semiconductor wafers This reaction generates heat which helps to accelerate cleaning
  • Online monitoring of sulfuric acid and hydrogen peroxide . . . - Metrohm
    Sulfuric acid-peroxide mix, also known as piranha solution (SPM), and dilute sulfuric acid-peroxide mix (DSP) are typically used to produce silicon wafers [2] Successful wet etching requires precise control of the reagent concentration in the bath solution
  • Aqueous Cleaning and Surface Conditioning Processes
    The sulfuric acid (H 2 SO 4) and H 2 O 2 mixture (SPM is sulfuric acid hydrogen peroxide mixture) also is relied upon for the postcleaning process Hydrofluoric acid (HF) is widely used for silicon dioxide (SiO 2 ) removal
  • Wet Chemical Processes for BEOL Technology | SpringerLink
    Alternatively, chemistries such as ultra-dilute sulfuric peroxide (uDSP), dilute SC1, and formulated chemistries were also proven to efficiently clean the post-etch residues Figure 6 4 shows the impact of wet clean after spacer etch back on electrical resistance and yield
  • Formulation and Evaluation of Diluted Sulfuric-Peroxide-HF (DSP+ . . .
    The adhesion forces of silica particles on silicon wafers were measured using atomic force microscopy in IPA solutions The adhesion force increased as the volume percent of IPA in water
  • Dilute HF Aqueous Cleaning Using Asymmetric Polyarylsulfone Membrane . . .
    A dilute mixture of HF and DI H2O (1:50 or 1:100) effectively etches away the thin layer of native oxide on silicon, leaving behind a hydrophobic surface that strongly attracts oppositely charged particles and is sensitive to organic contamination As a result, the HF must be kept as free of particles as possible





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